The NTMFS5C430N Power MOSFET is a key component, and understanding its specifications is crucial. Here's a breakdown of its maximum ratings and thermal characteristics:
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Maximum Ratings:
- Drain-to-Source Voltage (VDSS): 40V
- Gate-to-Source Voltage (VGS): ±20V
- Continuous Drain Current (ID):
- Steady State (TC = 25°C): 185A
- Steady State (TC = 100°C): 131A
- Power Dissipation (PD):
- Steady State (TC = 25°C): 106W
- Steady State (TC = 100°C): 53W
- Operating Junction and Storage Temperature: -55 to +175°C
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Thermal Resistance Maximum Ratings:
- Junction-to-Case - Steady State (RSJC): 1.4°C/W
- Junction-to-Ambient - Steady State (RSJA): 40°C/W
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Important Considerations:
- Thermal resistance values are highly dependent on the application environment and are not fixed constants. These values apply under specific conditions outlined in the datasheet.
- The specifications are based on the MOSFET being surface-mounted on an FR4 board with a 650 mm2, 2 oz. Cu pad.
- The maximum current for pulses lasting up to 1 second can exceed the steady-state values but is determined by pulse duration and duty cycle.
These specifications are essential when designing with the NTMFS5C430N Power MOSFET. Always refer to the most recent datasheet for the most accurate and complete information.